Lateral MoS2 p-n junction formed by chemical doping for use Brazil

Lateral MoS2 p-n junction formed by chemical doping for

Classification:Chemical Auxiliary Agent
CAS No.:117-84-0
Other Names:DOP Bis(2-ethylhexyl) phthalate
MF:C24H38O4, C24H38O4
EINECS No.:201-557-4
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This study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping

Thus, this study suggests an eﬀective way to form a lateral p n junction by the h-BN hard masking technique and to improve the photoresponse of MoS 2 by the chemical doping process.

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Ultimate thin vertical p–n junction composed of two Nature

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cas no 117-84-0
Other Names:Dop
MF:C6H4(COOC8H17)2
EINECS No.:201-557-4
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Choi, M. S. et al. Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano 8,9332–9340 (2014) . Article CAS Google Scholar

Lateral MoS 2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics Min Sup Choi 1, 2, Deshun Qu 1, 2, D curves of MoS 2 p-n diodes before

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Lateral MoS2 p-n junction formed by chemical doping for

Classification:Chemical Auxiliary Agent
CAS No.:117-84-0
Other Names:DOP/Dioctyl Phthalate
MF:C6H4(COOC8H17)2
EINECS No.:201-557-4
Purity:99.5%, 99.9%min.
Type:Oil drilling
Usage:Coating Auxiliary Agents, Leather Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ:200kgs
Package:200kgs/battle
Volume Resistivity:114

This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2

Choi, M. S. et al. Lateral MoS 2 p–n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano 8,9332–9340 (2014). Article CAS PubMed

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Lateral MoS2 p-n Junction Formed by Chemical

Classification:Chemical Auxiliary Agent
CAS No.:117-84-0
Other Names:DOP
MF:C24H38O4, C24H38O4
EINECS No.:201-557-4
Purity:99%min
Type:pvc additive
Usage:Plastic Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ::10 Tons
Package:25kg/drum
Advantage:Stable
Payment:T/T

Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by chemical doping process. Fabrication of the

The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior, with a maximum external quantum efficiency of ∼650%, ∼3.6 mA

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Lateral monolayer MoS2 homojunction devices prepared by

Classification:Chemical Auxiliary Agent, Chemical Auxiliary Agent
cas no 117-84-0
Other Names:Dioctyl Phthalate DOP
MF:C6H4(COOC8H17)2
EINECS No.:201-557-4
Purity:99.5%, 99.9%min.
Type:Chemical additives, Chemical dop plasticizer 99%
Usage:Coating Auxiliary Agents, Leather Auxiliary Agents, Paper Chemicals, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ:200kgs
Package:200kgs/battle
Place of Origin::China
Advantage:Stable

After the doping of N 2 +, the work function increased and the Fermi level of the p-type monolayer MoS 2 shifted towards the valance band and a built-in electric field from the n

Here, we employ benzyl viologen (BV) as an effective electron dopant to part of the area of a (p-type) few-layer BP flake and achieve an ambient stable, in-plane P–N junction. Chemical doping with BV molecules modulates the electron density and allows acquiring a large built-in potential in this in-plane BP P–N junction, which is crucial

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How efficient is a lateral Mos 2 p n junction?
The fabricated lateral MoS 2 p–n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10 10 Jones, and light switching ratio of ∼10 3) and ideal rectifying behavior.
How are lateral monolayer MOS homojunctions prepared?
In this article, the lateral monolayer MoS homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy.
What is the voltage of Mos 2 p n junction?
In solar cell applications, the vertical MoS 2 p–n junction showed a short-circuit current (ISC) of 5.1 nA and an open-circuit voltage (VOC) of 0.6 V. The current and voltage obtained at the maximum output power (Imax and Vmax) were 2.2 nA and 0.3 V, respectively.
What are atomic force microscopic images for a MoS2?
Atomic force microscopic images (scale bars are 3 µm) for a MoS2(a) before and (b) after 20 mM AuCl3doping. The formation of Au nano-aggregates comprises the surface charge transfer between AuCl4 -ions and MoS 2. 3 2. Electrodes and chemical doping effects for MoS2transistor
How does ambipolar carrier transport differ from unipolar MoS2 p n junctions?
Unlike usual unipolar MoS2, the MoS2 p–n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm.
Does degenerate doping with NB affect MoS2 crystals?
However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS2 crystals.