good stability Doping (semiconductor)

Efficient and air-stable n-type doping in organic

Classification:Chemical Auxiliary Agent, Chemical Auxiliary Agent
cas no 117-84-0
Other Names:DOP, Dioctyl phthalate
MF:C24H38O4, C24H38O4
EINECS No.:201-557-4
Purity:99.5% Min
Type:Plasticizer
Usage:Plasticizer
MOQ::10 Tons
Package:25kg/drum
Shape:Powder
Volume Resistivity:936
Item:T/T,L/C

To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self

Organic semiconductors (OSCs) have emerged as promising materials for a variety of organic electronic devices due to their unique combination of electrical conductivity, mechanical flexibility, and

Online Inquiry

A thermally activated and highly miscible dopant for n-type

Classification:Chemical Auxiliary Agent
CAS No.:117-84-0
Other Names:Dioctyl Phthalate
MF:C6H4(COOC8H17)2
EINECS No.:201-557-4
Purity:99.6%
Type:Plasticizer, Dioctyl Phthalate
Usage:Plastic Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ:200kgs
Package:200kgs/battle
Payment:T/T
Certificate::COA

Realizing efficient n-doping in organic thermoelectrics remains a challenge due to dopant-semiconductor immiscibility, poor dopant stability and low doping efficiency. Here, the

The DPP4T-D2A1 films at the dopant molar ratio of 0.3 exhibited a good stability, which could maintain >85% of their electrical conductivity while being laminated with

Online Inquiry

Enhancing stability of doped semiconductor polymers with

Classification:Chemical Auxiliary Agent, Chemical Auxiliary Agent
cas no 117-84-0
Other Names:DOP, diocty phthalate, 1,2-phthalate
MF:C24H38O4, C24H38O4
EINECS No.:201-557-4
Purity:99%min
Type:Adsorbent, plasticizer
Usage:Leather Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ:200kgs
Package:200kgs/battle
Application:PVC Plasticizer

Doping is a critical method for enhancing the electrical properties of semiconducting polymers, with ongoing innovations in dopant molecules and doping

The development of n-type organic semiconductors (OSCs) has been lagged behind that of p-type OSCs, mainly due to the limited availability of the electron deficient π-conjugated backbones and facile electron trapping by

Online Inquiry

Molecular doped, color-tunable, high-mobility,

Classification:Chemical Auxiliary Agent
CAS No.:117-84-0
Other Names:Dioctyl Phthalate DOP
MF:C6H4(COOC8H17)2
EINECS No.:201-557-4
Purity:99.5%, 99.9%min.
Type:Adsorbent
Usage:Coating Auxiliary Agents, Leather Auxiliary Agents, Paper Chemicals, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ::10 Tons
Package:25kg/drum
Shape:Powder
Place of Origin::China
Item:T/T,L/C

Here, we demonstrate a series of color-tunable, high-mobility, emissive, organic semiconductors via molecular doping with a high-mobility organic semiconductor, 2,6-diphenylanthracene, as the host. Redistributed

Semiconductor photocatalytic materials are mainly divided into metal semiconductors and non-metal semiconductors. Among the most prevalent metal

Online Inquiry

Highly efficient modulation doping: A path

Classification:Chemical Auxiliary Agent, Chemical Auxiliary Agent
cas no 117-84-0
Other Names:DOP Bis(2-ethylhexyl) phthalate
MF:C24H38O4, C24H38O4
EINECS No.:201-557-4
Purity:99.5% Min
Type:Carbon Black
Usage:Coating Auxiliary Agents, Leather Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents, Plastic Auxiliary Agents, Rubber Auxiliary Agents
MOQ::10 Tons
Package:25kg/drum
Certificate::COA

Efficient doping for charge-carrier creation is key in semiconductor technology. For silicon, efficient doping by shallow impurities was already demonstrated in 1949 ().In the development of further semiconductor

Controllable doping of semiconductors is a critical enabler of the modern electronics industry. It has led to revolutionary inventions including diodes, transistors, solar cells, photodetectors

Online Inquiry

Does doping improve the performance of organic semiconductor devices?
Doping has been widely used to improve the performance of organic semiconductor devices, including organic field-effect transistors, organic photovoltaic cells, organic light-emitting diodes, and organic thermoelectric generators 3, 4, 5.
Can coupled reaction doping improve the polarity of organic semiconductors?
A series of p-type dopants are developed for the preparation of bi-polar conducting polymers with the coupled reaction strategy. The results demonstrate that coupled reaction doping is a powerful tool in both improving the electrical properties and tuning the carrier polarity of organic semiconductors for modern organic electronics.
Can n-doping be used in high-performance semiconductors?
However, compared with many mature p-doping methods, n-doping of organic semiconductor is still of challenges. In particular, dopant stability/processability, counterion-semiconductor immiscibility and doping induced microstructure non-uniformity have restricted the application of n-doping in high-performance devices.
How to promote molecular doping of polymeric semiconductors?
In principle, the efficient molecular doping of polymeric semiconductors can be promoted by introducing a thermodynamically favorable reaction via adding additives to turn the doping process into a designed coupled reaction. However, coupled reaction doping still lacks study for organic semiconductor doping in previous works.
Why is doping important for metal-free Polymer semiconductors?
For metal-free polymer semiconductors, the doping of alkali metals not only changes the structure and cleanliness of single-layer materials, reduces the band gap to make full use of visible light, but also enhances the interaction between two-dimensional layers and improves photocatalytic activity.
Do n-type doped OSCs have doping efficiency and doping air stability?
In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions.